MHW10236N 1 rf device data freescale semiconductor gallium arsenide catv amplifier module features ? specified for 79 - , 112 - and 132 - channel loading ? excellent distortion performance ? integrated esd protection diodes ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 1000 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 1000 mhz, catv gaas forward amplifier module ? rohs compliant table 1. maximum ratings rating symbol value unit rf voltage input (single tone) v in +65 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c - 20 to +100 c storage temperature range t stg - 40 to +100 c table 2. esd maximum ratings rating input value output value unit surge voltage per iec 1000 - 4 - 5 200 200 v human body model per mil. std. 1686 2 2 kv table 3. electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 1000 mhz power gain 1000 mhz g p 23 23.8 24.5 db slope 40 - 1000 mhz s 0 0.55 1.2 db gain flatness (40 - 870 mhz, peak - to - valley) g f ? ? 0.8 db return loss ? input (z o = 75 ohms) 40 - 500 mhz 501 - 870 mhz 871 - 1000 mhz irl 20 18 15 ? ? ? ? ? ? db return loss ? output (z o = 75 ohms) 40 - 300 mhz 301 - 750 mhz 751 - 870 mhz 871 - 1000 mhz orl 20 19 16 12 ? ? ? ? ? ? ? ? db document number: MHW10236N rev. 0, 11/2006 freescale semiconductor technical data MHW10236N 1000 mhz 23.8 db gain 132 - channel gaas catv amplifier module case 1302 - 01, style 1 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor MHW10236N table 3. electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 system unless otherwise noted) (continued) characteristic symbol min typ max unit composite second order (v out = +48 dbmv/ch., worst case) 79 - channel flat (v out = +46 dbmv/ch., worst case) 112 - channel flat (v out = +44 dbmv/ch., worst case) 132 - channel flat cso 79 cso 112 cso 132 ? ? ? -66 -64 -64 -63 -60 -60 dbc cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55.25 mhz) 79 - channel flat (v out = +46 dbmv/ch., fm = 55.25 mhz) 112 - channel flat (v out = +44 dbmv/ch., fm = 55.25 mhz) 132 - channel flat xmd 79 xmd 112 xmd 132 ? ? ? -57 -57 -57 ? ? ? dbc composite triple beat (v out = +48 dbmv/ch., worst case) 79 - channel flat (v out = +46 dbmv/ch., worst case) 112 - channel flat (v out = +44 dbmv/ch., worst case) 132 - channel flat ctb 79 ctb 112 ctb 132 ? ? ? -66 -66 -68 -60 -60 -60 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz 1000 mhz nf ? ? ? ? ? 5.0 5.0 5.0 5.3 5.6 6.0 ? ? 6.5 6.5 db dc current (v dc = 24 v, t c = 45 c) i dc 240 255 270 ma
MHW10236N 3 rf device data freescale semiconductor package dimensions case 1302 - 01 issue e 2 style 1: pin 1. rf input 2. ground 3. ground 4. deleted 5. vdc 6. deleted 7. ground 8. ground 9. rf output 1589 j b s r v q 2x m f m 0.010 a m t m a m 0.020 t n g u c l m a m 0.010 z t m a m 0.010 z t 6?32unc?2b 2x w p k 37 x a f f a z y 2x 2x d 7x 4x e e t x z notes: 1. dimensions are in inches. 2. interpret dimensions and tolerances per asme y14.5m, 1994. x dim a min max min max millimeters ??? 1.775 ??? 45.085 inches b ??? 1.085 ??? 27.559 c ??? 0.840 ??? 21.336 d 0.015 0.021 0.381 0.533 e 0.465 0.510 11.811 12.954 f 0.300 0.325 7.62 8.255 g j k 0.315 0.355 8.001 9.017 l n p q 0.148 0.168 3.759 4.267 r ??? 0.600 ??? 15.24 s u v ??? 0.250 ??? 6.350 w 0.435 ??? 11.049 ??? x y 0.152 0.163 3.861 4.140 z 0.009 0.011 0.229 0.279 0.100 bsc 0.156 bsc 0.400 bsc 1.000 bsc 0.165 bsc 0.100 bsc 1.500 bsc 0.200 bsc 2.540 bsc 3.962 bsc 10.160 bsc 25.400 bsc 4.191 bsc 2.540 bsc 38.100 bsc 5.080 bsc
4 rf device data freescale semiconductor MHW10236N revision history the following table summarizes revisions to this document. revision date description 0 nov. 2006 ? initial release of data sheet
MHW10236N 5 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MHW10236N rev. 0, 11/2006
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